直流記憶磁通正交磁化可控電抗器調磁性能
薛米子,郭健
(南京航空航天大學 自動化學院,江蘇 南京 211106)
摘 要:針對傳統(tǒng)正交磁化可控電抗器寬范圍調磁時勵磁功率較大,同時交流磁路與直流電路間存在耦合的情況,提出了一種基于直流記憶磁通的正交磁化可控電抗器。利用可反復沖去磁的鋁鎳鈷永磁體代替直流激磁線圈產(chǎn)生直流磁通,并設計了交直流電路和磁路無耦合的新型正交磁路結構。仿真分析結果表明,該電抗器實現(xiàn)了直流磁路對交流磁路的單方向控制,使電抗器電感的控制調節(jié)更加簡單。
關鍵詞:直流記憶磁通;正交磁化可控電抗器;鋁鎳鈷
中圖分類號:TM47 文獻標識碼:A 文章編號:1007-3175(2019)02-0017-04
Field-Control Performance of DC Memory Flux Orthogonal Magnetizing Controllable Reactor
XUE Mi-zi, GUO Jian
(College of Automation Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 2111 06, China)
Abstract: Aiming at the condition that the exciting power is bigger when the orthogonal magnetizing controllable reactor adjusts the flux in wide range and there is coupling between the AC magnetic circuit and the DC circuit. This paper proposed a kind of orthogonal magnetizing controllable reactor based on DC memory flux. The aluminum nickel cobalt alloy (AlNiCo) magnet with low coercive force and high residual flux density was used so that the DC flux could be online tuned without additional copper loss. This paper designed the new type of orthogonality magnetic structure without coupling between the AC-DC circuit and magnetic circuit. The simulated analysis result shows that this electric reactor realizes the unidirectional control from the DC magnetic circuit to AC magnetic circuit, which makes the inductor of electric reactor controllable more easily.
Key words: DC memory flux; orthogonal magnetizing controllable reactor; AlNiCo
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